Modulation performance of 1.3 and 1.51 µm ingaasp buried crescent injection lasers with semi-insulating current confinement layer | Academic Article individual record

A hybrid growth technique has been used to fabricate low threshold 1.51 and 1.3 µm InGaAsP buried crescent (BC) injection lasers with a semi-insulating current confinement layer. The technique involves a first stage of low pressure metal organic chemical vapor deposition (LPMOCVD) followed by a liquid phase epitaxy (LPE) stage. The BC lasers exhibit CW threshold currents as low as 12 mA at 25'C, high yield, differential quantum efficiency over 41%, and output power more than 18 mW. Small-signal modulation response to 3.5 GHz and 5 GHz has been obtained for 1.51 and 1.3 um laser respectively. The BC lasers show an initial small degradation rate of 1%/kh at 50'C which gives an estimated operating lifetime of 47 years at 25'C. © 1987 SPIE.

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Cheng, W. H., Su, C. B., Buehring, K. D., Chien, C. P., Ure, J. W., Perrachione, D., ... Zehr, S. W.
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